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2 edition of study of shallow implants in silicon by secondary ion mass spectrometry found in the catalog.

study of shallow implants in silicon by secondary ion mass spectrometry

Harvey Stuart Fox

study of shallow implants in silicon by secondary ion mass spectrometry

by Harvey Stuart Fox

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  • 25 Currently reading

Published by typescript in [s.l.] .
Written in English


Edition Notes

Thesis (Ph.D.) - University of Warwick, 1989.

Statementby Harvey Stuart Fox.
ID Numbers
Open LibraryOL13935230M

This volume contains full proceedings of the Fourth International Conference on Secondary Ion Mass Spectrometry (SIMS-IV), held in the Minoo-Kanko Hotel, Osaka, Japan, from November 13th to 19th, Coordinated by a local or­ ganizing committee under the auspices of the international organizing. study that was done on 40 and keV N2 1 implants into silicon. Nitrogen was implanted as N2 1 at 40 keV into Czo-chralski silicon wafers at a dose of ions/cm2 through a 50 Å screen oxide. The wafers were then furnace annealed under an inert ambient at and °C 30, and 45 min. Secondary ion mass spectroscopy ~SIMS.

Channeling effects in ion implantation are reviewed comparing experimental data with Monte Carlo simulations. B, and P ions at energies ranging from and 1 MeV were implanted along the [], [], and [] axes or in a random direction of silicon by: 2. However, ion implantation gives uniform fluences over large areas; thus, it is possible to ‘co-implant’ an additional reference material of any bulk composition having known amounts of E, independently calibrating the implant fluence. Isotope ratio measurement standards can be produced by implanting two different isotopes, but permil level.

P. K. Chu and S. L. Grube, “Quantitative Determination of Boron and Phosphorus in Borophosphosilicate Glass by Secondary Ion Mass Spectrometry”, Analytical Chemistry, vol. 57, pp. - (). Abstract: A physically based model for ion implantation of any species into single crystal silicon has been developed, tested and implemented in the ion implant simulator, UT-MARLOWE. In this model, an interpolation scheme, based on mathematical properties of ion-target interatomic potential, was employed and implemented to calculate the scattering by: 4.


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Study of shallow implants in silicon by secondary ion mass spectrometry by Harvey Stuart Fox Download PDF EPUB FB2

This project investigates the analysis of shallow implants by secondary ion mass spectrometry (SIMS) and the problems that arise from it.

Ion implantation is now almost exclusively used in the manufacture of modern very large scale integration devices. The quantification of these implants can be carried out very successfully by : Harvey Stuart Fox. Time-of-flight secondary ion mass spectrometry and atomic force microscopy are employed to characterize a wedge-shaped crater eroded by a keV C(60)(+) cluster.

The usefulness of secondary ion mass spectrometry as a process control tool in integrated circuit applications has been investigated. As a test case, shallow As implants (4–40 keV) in silicon and silicon dioxide are measured and the range parameters (projected range, range straggling, skewness, and kurtosis) are derived.

In this work it is shown that the measurements of these shallow Cited by: Quantitative depth profiling of ultra-shallow phosphorus implants in silicon using time-of-flight secondary ion mass spectrometry and the nuclear reaction 31P(α,p0)34S Article Sep The behavior of ultra shallow ion implants of arsenic in Si following solid phase epitaxial re-growth process is reported.

A 16 nm amorphous layer was created by ion implantation of Si{sup +} at energy 5 keV and a dose 1 Multiplication-Sign 10{sup 15} at/cm{sup 2}.

This volume contains contributions presented as plenary,invited and contributed poster and oral presentations at the 11thInternational Conference on Secondary Ion Mass Spectrometry (SIMSXI) held at the Hilton Hotel, Walt Disney World Village, Orlando,Florida, 7 12 September, The book covers a diverse range ofresearch, reflecting the rapid growth in advanced.

The use of oxygen flooding and an amorphous Si capping for secondary ion mass spectrometry (SIMS) depth profiling of ultralow-energy implants is discussed in terms of the accuracy of the depth and concentration scale.

Further, the advantages of a lower primary ion energy and the simultaneous mass registration on a time-of-flight-SIMS with dual Cited by: Secondary ion mass spectrometry: applications for depth profiling and surface characterization Fred Stevie This book was written to explain a technique that requires an understanding of many details in order to properly obtain and interpret the data obtained.

@article{osti_, title = {Secondary ion mass spectrometry: basic concepts, instrumental aspects, applications and trends}, author = {Benninghoven, A. and Rudenauer, F.G. and Werner, H.W.}, abstractNote = {In their preface, the authors note that no comprehensive treatment of secondary-ion mass spectrometry exists and that this book was written to correct the omission.

Primary ion beams of SF 5 +, C 8 - and CsC 6 - have been used to analyze low energy arsenic implants in silicon, boron delta-doped structures, thin gate oxides, metal multilayers, organic surface contamination and photoresist thin films. Compared to monoatomic bombardment under the same conditions, cluster ion beams offer improved depth Cited by: 3.

The analysis of shallow, steeply varying profiles, using secondary ion mass spectrometry with quadrupole and magnetic sector instruments, is described. The problems in generating a reliable profile, free of transient effects, and ion beam induced displacements and broadening effects, in both types of instruments are discussed.

The most important conclusion is that one should be capable of Cited by:   Abstract. This chapter will introduce the analyst to secondary ion mass spectrometry (SIMS). Ion beam sputtering, instrumentation, analytical considerations, and actual analyses with mass spectra, depth profiles, and ion imaging will be discussed from the perspective of the instrument : Judith E.

Baker. Product Information. This volume contains contributions presented as plenary, invited and contributed poster and oral presentations at the 11th International Conference on Secondary Ion Mass Spectrometry (SIMS XI) held at the Hilton Hotel, Walt Disney World Village, Orlando, Florida, 7 12 September, In this study, we use secondary ion mass spectrometry to verify the implantation of magnetic ions in NDs and the success of separation.

When applied to a series of NDs with embedded iron or manganese ions, the sorting tool used in this study proved highly effective in selecting magnetic : Bo-Rong Lin, Bo-Rong Lin, Chiung-Chi Wang, Chien-Hsu Chen, Srinivasu Kunuku, Tung-Yuan Hsiao, Hung-K.

On the use of Secondary Ion Mass Spectrometry in Semiconductor Device Materials and Process Development. MRS Proceedings48 DOI: /PROC A.A. Galuska, G.H. Morrison. Oxide bond energies for the calibration of matrix effects in secondary ion mass by: KEYWORDS: arsenic, ion implantation, low energy, sub-keV, secondary ion mass spectrometry, SIMS 1.

Introduction Shallow junction formation is the most fundamental technology for suppressing short-channel effects. For shal-low junction formation, low-energy ion implantation and subsequent low-thermal-budget annealing are required. Ion implantation-induced damage depth profiles of keV Al + ion-implanted 6H-SiC were studied using RBS/C technique for implantations along channeling direction and non-channeling direction with fluence of × 10 15 cm −ing method of sample preparation was used to get access to the deeper situated layers over the whole damaged region and by: 8.

Get this from a library. Secondary ion mass spectrometry: SIMS IV: proceedings of the fourth international conference, Osaka, Japan, November[A. Abstract. Recent results for the complementary techniques of ion implantation and secondary ion mass spectrometry are discussed for III-V and II-VI materials and device by: 6.

The New Atomika SIMS for Shallow Junction Profiling by eV-Primary Ion Beams SIMS Depth Profiling of Ultra Shallow Implants and Junctions in Silicon - Present Performance and Future Potential (invited) Dowsett, M.

Time of Flight Secondary Ion Mass Spectrometry Study of Ion Formation Mechanism: Effects of End Group Chemistry. The U.S. semiconductor industry relies heavily on secondary ion mass spectrometry (S I M S) for characterization of the depth distribution of dopants in silicon.

To achieve high accuracy in the concentration determination by S I M S, standards of known dopant concentration, conveniently provided by ion implants of certified dose, are required.

Resonance Ionization Mass Spectrometry-Applications to Surface Analyses and Depth Profiles of Semiconductors: Identification, Simulation, and Avoidance of Artifacts in Ultra-Shallow Depth Profiling by Secondary Ion Mass Spectrometry: Materials Characterization-General: High-Resolution Microcalorimeter Energy-Dispersive Spectrometer Pages: Ion Implantation Page 20 BF2 IMPLANTS § Boron mass = 11 § Fluorine mass = 19 § BF2 mass = 49 § The energy divides by mass so KeV BF2 is equivalent to KeV B11 implant § BF2 peak is larger than B11 peak giving more current and shorter time for large dose implants § BF2 can give shallow implants § BF2 reduces channeling (explained File Size: 1MB.